the Moore's law dominated by silicon semiconductor materials gradually moves towards its physical limit, and silicon cannot meet the needs of the rapid development of new needs such as microwave radio frequency, high-efficiency power electronics and optoelectronics, the rapid rise of new semiconductor materials represented by compound semiconductor materials, especially the third generation of semiconductors, will have a crucial impact on the reshaping of the international semiconductor industry pattern in the next 10 years. The third generation of semiconductors emerged in the early 90s of the last century, represented by wide bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN), which have superior properties such as high breakdown electric field, large thermal conductivity, high electron saturation drift rate, and strong radiation resistance, and are widely used in key areas such as information society, artificial intelligence, Internet of Everything, modern agriculture, modern medical care, intelligent transportation, national defense and security. One of the main indicators of defense capability and international competitiveness.

silicon carbide is the only power semiconductor material that can reach the level of 10,000 volts and kiloamperes necessary for the new power system - UHV power grid, and it is also the "heart" of the traction and electronic control system of high-speed rail and new energy vehicles, which can reduce the volume and weight of the high-speed rail power system by 20% and the loss by 20%; The volume and weight of the electronic control system of new energy vehicles are reduced by 80%, and the power conversion efficiency is increased by 20%. Gallium nitride is currently the only material that can achieve high frequency, high efficiency and high power at the same time, and is the key material to support the upgrading of 5G communication base stations, the priority layout of 6G communication base stations, and the improvement of military radar performance.

to incomplete statistics, in 2022, the United States, the United Kingdom, Italy, Singapore, Japan, France and other countries will newly deploy 21 third-generation semiconductor public R&D projects, with an amount of more than 1.26 billion US dollars. It involves materials, epitaxy, devices, systems and other links, highlighting 8-inch silicon carbide substrate and wafer manufacturing, silicon carbide power devices and electronic control systems for automotive 800V voltage platforms.

Driven by the demand for new energy vehicles, photovoltaics, energy storage, etc., the third-generation semiconductor industry is developing rapidly, and the global silicon carbide and gallium nitride power semiconductor market size will be about 2.37 billion US dollars in 2022.